Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields
نویسندگان
چکیده
A semiclassical Monte Carlo technique is employed to simulate the steady-state electron transport in silicon dioxide at intermediate and high electric fields. The electronic band-structure is modelled by a single parabolic, by a single nonparabolic as well as an isotropic four-band model. We find that the electronic behavior of silicon dioxide is mainly influenced by a single nonparabolic conductionband.
منابع مشابه
Steady-State Electron Transport in Silicon Dioxide Employing Different Electronic Band-Structures
A semiclassical Monte Carlo technique is employed to simulate the steady-state electron transport in silicon dioxide at intermediate and high electric fields. The electronic structure is modelled by a single parabolic, by a single nonparabolic as well as an isotropic four-band model. We find that the electronic behavior of silicon dioxide is mainly influenced by a single nonparabolic conduction...
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تاریخ انتشار 2007